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MJE5740, MJE5742
MJE5742 is a Preferred Device
NPN Silicon Power Darlington Transistors
The MJE5740 and MJE5742 Darlington transistors are designed for high-voltage power switching in inductive circuits.
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* Pb-Free Packages are Available*
Applications
* * * * *
Small Engine Ignition Switching Regulators Inverters Solenoid and Relay Drivers Motor Controls
POWER DARLINGTON TRANSISTORS 8 AMPERES 300-400 VOLTS 80 WATTS
MAXIMUM RATINGS
Rating Collector-Emitter Voltage MJE5740 MJE5742 Collector-Emitter Voltage MJE5740 MJE5742 Emitter-Base Voltage Collector Current Base Current - Continuous - Peak (Note 1) - Continuous - Peak (Note 1) VEB IC ICM IB IBM PD PD TJ, Tstg VCEV 600 800 8 8 16 2.5 5 2 16 80 640 -65 to +150 Vdc Adc Adc W W/_C W W/_C _C 1 2 3 TO-220AB CASE 221A-09 STYLE 1 Symbol VCEO(sus) 300 400 Vdc Value Unit Vdc 100 50
MARKING DIAGRAM
Total Device Dissipation @ TC = 25_C Derate above 25C Total Device Dissipation @ TC = 25_C Derate above 25C Operating and Storage Junction Temperature Range
MJE574xG AY WW
THERMAL CHARACTERISTICS
Characteristics Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Maximum Lead Temperature for Soldering Purposes 1/8 from Case for 5 Seconds Symbol RqJC RqJA TL Max 1.25 62.5 275 Unit _C/W _C/W _C
MJE574x G A Y WW
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. Pulse Test: Pulse Width = 5 ms, Duty Cycle 10%.
= Device Code x = 0 or 2 = Pb-Free Package = Assembly Location = Year = Work Week
ORDERING INFORMATION
See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet.
*For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
(c) Semiconductor Components Industries, LLC, 2006
Preferred devices are recommended choices for future use and best overall value.
1
February, 2006 - Rev. 6
Publication Order Number: MJE5740/D
MJE5740, MJE5742
IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I I III I I I I I II II I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIII I II I I IIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I I I I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII IIIIIIII III I I I I I II I I IIIIIIII IIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII III IIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I I II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I I II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I I II I I III I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIII I I I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIII II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I II II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III III I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIII IIIIIIIIIIIIIIIIIIIII III I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIII IIIIIIIIIIIIIIIIIIIIIII II II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIII I I II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIII
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Characteristic OFF CHARACTERISTICS (Note 2) Symbol Min Typ Max Unit Collector-Emitter Sustaining Voltage (IC = 50 mA, IB = 0) MJE5740 MJE5742 VCEO(sus) ICEV 300 400 - - - - - - - - - - 1 5 Vdc Collector Cutoff Current (VCEV = Rated Value, VBE(off) = 1.5 Vdc) (VCEV = Rated Value, VBE(off) = 1.5 Vdc, TC = 100_C) Emitter Cutoff Current (VEB = 8 Vdc, IC = 0) mAdc mAdc IEBO 75 SECOND BREAKDOWN Second Breakdown Collector Current with Base Forward Biased Clamped Inductive SOA with Base Reverse Biased IS/b See Figure 6 See Figure 7 RBSOA ON CHARACTERISTICS (Note 2) DC Current Gain (IC = 0.5 Adc, VCE = 5 Vdc) (IC = 4 Adc, VCE = 5 Vdc) hFE 50 200 - - - - - - - 100 400 - - - - - - - - - - Collector-Emitter Saturation Voltage (IC = 4 Adc, IB = 0.2 Adc) Collector-Emitter Saturation Voltage (IC = 8 Adc, IB = 0.4 Adc) Collector-Emitter Saturation Voltage (IC = 4 Adc, IB = 0.2 Adc, TC = 100_C) Base-Emitter Saturation Voltage (IC = 4 Adc, IB = 0.2 Adc) Base-Emitter Saturation Voltage (IC = 8 Adc, IB = 0.4 Adc) Base-Emitter Saturation Voltage (IC = 4 Adc, IB = 0.2 Adc, TC = 100_C) Diode Forward Voltage (Note 3) (IF = 5 Adc) VCE(sat) 2 3 2.2 Vdc VBE(sat) 2.5 3.5 2.4 2.5 Vdc Vf Vdc SWITCHING CHARACTERISTICS Typical Resistive Load (Table 1) Delay Time Rise Time td tr - - - - 0.04 0.5 8 2 - - - - ms ms ms ms Storage Time Fall Time (VCC = 250 Vdc, IC(pk) = 6 A IB1 = IB2 = 0.25 A, tp = 25 ms, Duty Cycle v 1%) ts tf Inductive Load, Clamped (Table 1) Voltage Storage Time Crossover Time (IC(pk) = 6 A, VCE(pk) = 250 Vdc IB1 = 0.06 A, VBE(off) = 5 Vdc) tsv tc - - 4 2 - - ms ms 2. Pulse Test: Pulse Width 300 ms, Duty Cycle = 2%. 3. The internal Collector-to-Emitter diode can eliminate the need for an external diode to clamp inductive loads. Tests have shown that the Forward Recovery Voltage (Vf) of this diode is comparable to that of typical fast recovery rectifiers.
ORDERING INFORMATION
Device MJE5740 MJE5740G MJE5742 MJE5742G Package TO-220 TO-220 (Pb-Free) TO-220 TO-220 (Pb-Free) 50 Units / Rail Shipping
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MJE5740, MJE5742
TYPICAL CHARACTERISTICS
100 POWER DERATING FACTOR (%) 80 SECOND BREAKDOWN DERATING IC 60 THERMAL DERATING 40 20 0 VCE IB 90% IB1 tsv
IC(pk) 90% VCE(pk) trv tc 10% VCE(pk)
VCE(pk) 90% IC tfi tti
10% IC(pk)
2% IC
0
20
40 120 60 80 100 TC, CASE TEMPERATURE (C)
140
160
TIME
Figure 1. Power Derating
Figure 2. Inductive Switching Measurements
2000 VBE, BASE-EMITTER VOLTAGE (VOLTS) 1000 hFE , DC CURRENT GAIN VCE = 5 V 150C +25 C
2.4 2.2 2 1.8 1.6 1.4 1.2 1 0.8 0.6 0.4 0.2 0.5 1 2 5 IC, COLLECTOR CURRENT (AMPS) 10 +150C +25 C -55 C hFE = 20
-55 C 100
10 0.1
1 2 IC, COLLECTOR CURRENT (AMPS)
5
10
Figure 3. DC Current Gain
Figure 4. Base-Emitter Voltage
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MJE5740, MJE5742
Table 1. Test Conditions for Dynamic Performance
REVERSE BIAS SAFE OPERATING AREA AND INDUCTIVE SWITCHING RESISTIVE SWITCHING
+5 V 1N493 3 TEST CIRCUITS 0.001 mF PW DUTY CYCLE 10% tr, tf 10 ns 68 33 1N493 3 2N222 2 33 MJE21 0
VCC +VCC L MR826 * Vclamp *SELECTED FOR 1 kV VCE D 1 -4 V RB RC TUT SCOPE
1 k
RB IB
IC 5.1 k 51
1 +5 Vk 1 k 2N2905 47 1/2 W 100
NOTE: PW and VCC Adjusted for Desired IC RB Adjusted for Desired IB1
1N493 3 0.02 mF 270
T.U.T. MJE20 0 - VBE(off)
CIRCUIT VALUES
COIL DATA: FERROXCUBE CORE #6656 FULL BOBBIN (~16 TURNS) #16
GAP FOR 200 mH/20 A Lcoil = 200 mH OUTPUT WAVEFORMS
VCC = 30 V VCE(pk) = 250 Vdc IC(pk) = 6 A
VCC = 250 V D1 = 1N5820 OR EQUIV.
TEST WAVEFORMS
IC IC(pk) t1 VCE VCE OR Vclamp TIME t2 tf
+10 V
25 ms
tf CLAMPED t
t1 ADJUSTED TO OBTAIN IC t1 t2
Lcoil (IC pk)
VCC
Lcoil (IC pk)
TEST EQUIPMENT SCOPE-TEKTRONICS 475 OR EQUIVALENT
0 - 9.2 V tr, tf < 10 ns DUTY CYCLE = 1% RB AND RC ADJUSTED FOR DESIRED IB AND IC
t
Vclamp
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
1.8 1.6 1.4 1.2 1 +25 C +150C -55 C hFE = 20
0.8 0.6 0.4 0.2 0.1
0.2
0.5 1 2 5 IC, COLLECTOR CURRENT (AMPS)
10
Figure 5. Inductive Switching Measurements
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MJE5740, MJE5742
SAFE OPERATING AREA INFORMATION
FORWARD BIAS REVERSE BIAS
There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC - VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 6 is based on TC = 25_C; T J(pk) is variable depending on power level. Second breakdown pulse limits are valid for duty cycles to 10% but must be derated when TC 25_C. Second breakdown limitations do not derate the same as thermal limitations. Allowable current at the voltages shown on Figure 6 may be found at any case temperature by using the appropriate curve on Figure 1.
For inductive loads, high voltage and high current must be sustained simultaneously during turn-off, in most cases, with the base to emitter junction reverse biased. Under these conditions the collector voltage must be held to a safe level at or below a specific value of collector current. This can be accomplished by several means such as active clamping, RC snubbing, load line shaping, etc. The safe level for these devices is specified as Reverse Bias Safe Operating Area and represents the voltage-current condition allowable during reverse biased turnoff. This rating is verified under clamped conditions so that the device is never subjected to an avalanche mode. Figure 7 gives the complete RBSOA characteristics.
The Safe Operating Area figures shown in Figures 6 and 7 are specified ratings for these devices under the test conditions shown. 16 100 ms 10 ms 5 ms IC, COLLECTOR CURRENT (AMPS) 14 12 10 8 6 4 2 0 0 VBE(off) 5 V TJ = 100C MJE5742 MJE5740 100 200 300 400 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 500
IC, COLLECTOR CURRENT (AMPS)
16 10 8 3 1 0.5 0.3
BONDING WIRE LIMIT 1 ms dc THERMAL LIMIT (SINGLE PULSE) 0.1 SECOND BREAKDOWN LIMIT MJE5742 0.05 CURVES APPLY BELOW RATED VCEO MJE5740 0.02 5 10 20 50 200 100 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 400
Figure 6. Forward Bias Safe Operating Area
Figure 7. Reverse Bias Safe Operating Area
RESISTIVE SWITCHING PERFORMANCE
10 1 0.7 0.5 t, TIME ( s) 0.3 0.2 0.1 0.07 0.05 0.03 0.02 0.2 tr 7 5 t, TIME ( s) 3 2 1 0.7 0.5 0.3 0.2 0.2 0.3 tf VCC = 250 V IB1 = IB2 IC/IB = 20 ts
td
VCC = 250 V IB1 = IB2 IC/IB = 20
0.3
0.5 0.7
1
2
3
5
7
10
0.5 0.7
1
2
3
5
7
10
IC, COLLECTOR CURRENT (AMPS)
IC, COLLECTOR CURRENT (AMPS)
Figure 8. Turn-On Time
Figure 9. Turn-Off Time
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MJE5740, MJE5742
PACKAGE DIMENSIONS
TO-220AB CASE 221A-09 ISSUE AA
-T- B
4
SEATING PLANE
F T S
C
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. DIM A B C D F G H J K L N Q R S T U V Z INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.147 0.095 0.105 0.110 0.155 0.018 0.025 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 --- --- 0.080 BASE COLLECTOR EMITTER COLLECTOR MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 3.73 2.42 2.66 2.80 3.93 0.46 0.64 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 --- --- 2.04
Q
123
A U K
H Z L V G D N R J
STYLE 1: PIN 1. 2. 3. 4.
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MJE5740/D

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